SUP50N10-21P-GE3
Part NoSUP50N10-21P-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 100V 50A TO220AB
Datasheet
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ECAD Module
Specification
PackageTube
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C50A (Tc)
DriveVoltage(MaxRdsOn6V, 10V
MinRdsOn)21mOhm @ 10A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs68 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2055 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.1W (Ta), 125W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220AB
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
2955
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Associated Product
