SiSS02DN-T1-GE3
Part NoSiSS02DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 25V 51A/80A PPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)25 V
Current-ContinuousDrain(Id)@25°C51A (Ta), 80A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)1.2mOhm @ 15A, 10V
RdsOn(Max)@Id2.2V @ 250µA
Vgs83 nC @ 10 V
Vgs(th)(Max)@Id+16V, -12V
Vgs(Max)4450 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature5W (Ta), 65.7W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8S
SupplierDevicePackagePowerPAK® 1212-8S
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6631
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.3578 | |
| 10 | 1.3306 | |
| 100 | 1.2899 | |
| 1000 | 1.2492 | |
| 10000 | 1.1949 |
Associated Product
