NXPSC08650DJ
RoHS

NXPSC08650DJ

Part NoNXPSC08650DJ
ManufacturerWeEn Semiconductors
DescriptionDIODE SIL CARBIDE 650V 8A DPAK
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ECAD Module NXPSC08650DJ
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Specification
PackageTape & Reel (TR)
Series-
ProductStatusObsolete
TechnologySiC (Silicon Carbide) Schottky
Voltage-DCReverse(Vr)(Max)650 V
Current-AverageRectified(Io)8A
Voltage-Forward(Vf)(Max)@If1.7 V @ 8 A
SpeedNo Recovery Time > 500mA (Io)
ReverseRecoveryTime(trr)230 µA @ 650 V
Current-ReverseLeakage@Vr260pF @ 1V, 1MHz
Capacitance@VrSurface Mount
FTO-252-3, DPak (2 Leads + Tab), SC-63
MountingTypeDPAK
Package/Case175°C (Max)
SupplierDevicePackage0 ns
OperatingTemperature-Junction-
Grade-
Qualification
In Stock: 2693
Pricing
QTY UNIT PRICE EXT PRICE
1 2.156
10 2.1129
100 2.0482
1000 1.9835
10000 1.8973
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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