WNSCM80120WQ
Part NoWNSCM80120WQ
ManufacturerWeEn Semiconductors
DescriptionWNSCM80120W/TO-247/STANDARD MARK
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C42A (Ta)
DriveVoltage(MaxRdsOn20V
MinRdsOn)98mOhm @ 20A, 20V
RdsOn(Max)@Id4.5V @ 6mA
Vgs59 nC @ 20 V
Vgs(th)(Max)@Id+25V, -10V
Vgs(Max)1350 pF @ 1000 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature230W (Ta)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-3
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6429
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 6.7425 | |
| 10 | 6.6076 | |
| 100 | 6.4054 | |
| 1000 | 6.2031 | |
| 10000 | 5.9334 |
Associated Product
