E4M0045075K1
Part NoE4M0045075K1
ManufacturerWolfspeed, Inc.
DescriptionIC
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesE
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)750 V
Current - Continuous Drain (Id) @ 25°C42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs60mOhm @ 17.6A, 15V
Vgs(th) (Max) @ Id3.8V @ 4.84mA
Gate Charge (Qg) (Max) @ Vgs65 nC @ 15 V
Vgs (Max)+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds1606 pF @ 500 V
FET Feature-
Power Dissipation (Max)139W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4
GradeAutomotive
QualificationAEC-Q101
In Stock:
2090
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 12.94 | |
| 10 | 12.681 | |
| 100 | 12.29 | |
| 1000 | 11.9 | |
| 10000 | 11.39 |
Associated Product
