HAS530M12BM3
Part NoHAS530M12BM3
ManufacturerWolfspeed, Inc.
DescriptionIC
Datasheet
Download Now!
ECAD Module
Specification
PackageBulk
Series-
Product StatusActive
TechnologySilicon Carbide (SiC)
Configuration2 N-Channel (Half Bridge)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C530A
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max-
Operating Temperature-
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device Package-
Grade-
Qualification-
In Stock:
2080
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1128.93 | |
| 10 | 1106.351 | |
| 100 | 1072.48 | |
| 1000 | 1038.62 | |
| 10000 | 993.46 |
Associated Product
