XP3P010H
Part NoXP3P010H
ManufacturerYAGEO XSEMI
DescriptionMOSFET P CH -30V 18.5A TO-252
Datasheet
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ECAD Module
Specification
PackageTube
Series*
Product StatusActive
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-
Grade-
Qualification-
In Stock:
2107
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.251 | |
| 10 | 0.246 | |
| 100 | 0.24 | |
| 1000 | 0.23 | |
| 10000 | 0.22 |
Associated Product
