XP65SL190DI
Part NoXP65SL190DI
ManufacturerYAGEO XSEMI
DescriptionMOSFET N-CH 650V 20A TO220CFM
Datasheet
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ECAD Module
Specification
PackageTube
SeriesXP65SL190D
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C20A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)190mOhm @ 6.2A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs92.8 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)3312 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.92W (Ta), 34.7W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220CFM
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
20096
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 7.2417 | |
| 10 | 7.0969 | |
| 100 | 6.8796 | |
| 1000 | 6.6624 | |
| 10000 | 6.3727 |
Associated Product
