Specification
Collector-Emitter Breakdown Voltage (Vceo)45V
Power Dissipation (Pd)200mW
Collector Current (Ic)100mA
DC Current Gain (hFE@Ic,Vce)200@1mA,5V
Transition Frequency (fT)150MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)300mV@100mA,5mA
Transistor TypeNPN
Operating Temperature+150u2103@(Tj)
In Stock:
18042
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.0228 | |
10 | 0.0223 | |
100 | 0.0217 | |
1000 | 0.021 | |
10000 | 0.0201 |