Specification
Collector-Emitter Breakdown Voltage (Vceo)80V
Power Dissipation (Pd)300mW
Collector Current (Ic)500mA
DC Current Gain (hFE@Ic,Vce)100@10mA,1V
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)250mV@100mA,10mA
Transistor TypeNPN
Operating Temperature-55u2103~+150u2103@(Tj)
In Stock:
12147
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.0554 | |
10 | 0.0543 | |
100 | 0.0526 | |
1000 | 0.0509 | |
10000 | 0.0487 |
Associated Product