2SJ632-M-TD-E
Part No2SJ632-M-TD-E
Manufactureronsemi
Description2SJ632 - P-CHANNEL SILICON MOSFE
Datasheet
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ECAD Module
Specification
PackageBulk
Series*
ProductStatusActive
FETType-
Technology-
DraintoSourceVoltage(Vdss)-
Current-ContinuousDrain(Id)@25°C-
DriveVoltage(MaxRdsOn-
MinRdsOn)-
RdsOn(Max)@Id-
Vgs-
Vgs(th)(Max)@Id-
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature-
PowerDissipation(Max)-
OperatingTemperature-
MountingType-
SupplierDevicePackage-
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4456
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.3774 | |
| 10 | 0.3699 | |
| 100 | 0.3585 | |
| 1000 | 0.3472 | |
| 10000 | 0.3321 |
Associated Product
