2SJ646-TL-E
Part No2SJ646-TL-E
Manufactureronsemi
DescriptionP-CHANNEL SILICON MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C8A
DriveVoltage(MaxRdsOn4V, 10V
MinRdsOn)75mOhm @ 4A, 10V
RdsOn(Max)@Id2.6V @ 1mA
Vgs11 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)510 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1W (Ta), 15W (Tc)
PowerDissipation(Max)150°C
OperatingTemperatureThrough Hole
MountingTypeTP
SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
12604
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.2058 | |
| 10 | 0.2017 | |
| 100 | 0.1955 | |
| 1000 | 0.1893 | |
| 10000 | 0.1811 |
Associated Product
