Specification
Collector-Emitter Breakdown Voltage (Vceo)50V
Power Dissipation (Pd)400mW
Collector Current (Ic)150mA
DC Current Gain (hFE@Ic,Vce)-
Transition Frequency (fT)80MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)100mV@100mA,10mA
Transistor TypeNPN
Operating Temperature+150u2103@(Tj)
In Stock:
7481
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.03 | |
| 10 | 0.029 | |
| 100 | 0.03 | |
| 1000 | 0.03 | |
| 10000 | 0.03 |
Associated Product
