Specification
Mfronsemi
Series-
PackageBulk
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12 V
Current - Continuous Drain (Id) @ 25u00b0C6A (Ta)
Rds On (Max) @ Id, Vgs34mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs22 nC @ 4.5 V
Vgs (Max)u00b18V
Input Capacitance (Ciss) (Max) @ Vds1900 pF @ 6 V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Operating Temperature150u00b0C
Mounting TypeSurface Mount
Supplier Device Package6-CPH
Package / CaseSOT-23-6 Thin, TSOT-23-6
In Stock:
6863
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 11.0 | |
| 10 | 10.78 | |
| 100 | 10.45 | |
| 1000 | 10.12 | |
| 10000 | 9.68 |
Associated Product
