FCB20N60F
RoHS

FCB20N60F

Part NoFCB20N60F
Manufactureronsemi
Description-
Datasheet Download Now!
ECAD Module FCB20N60F
Get Quotation Now!
Specification
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)20A
Drain Source On Resistance (RDS(on)@Vgs,Id)150mu03a9@10V,10A
Power Dissipation (Pd)208W
Gate Threshold Voltage (Vgs(th)@Id)5V@250uA
Reverse Transfer Capacitance (Crss@Vds)95pF@25V
TypeNu6c9fu9053
Input Capacitance (Ciss@Vds)2.37nF@25V
Total Gate Charge (Qg@Vgs)75nC@10V
Operating Temperature-55u2103~+150u2103@(Tj)
In Stock: 11534
Pricing
QTY UNIT PRICE EXT PRICE
1 2.6707
10 2.6173
100 2.5371
1000 2.457
10000 2.3502
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
STFI13NK60Z
STFI13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A I2PAKFP
FQB2N50TM
FQB2N50TM
onsemi
MOSFET N-CH 500V 2.1A D2PAK
NTMFS6H852NLT1G
NTMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
IRLU024ZPBF
IRLU024ZPBF
Infineon
MOSFET N-CH 55V 16A I-PAK
CPH6341-M-TL-E
CPH6341-M-TL-E
onsemi
MOSFET P-CH 30V 5A CPH6
PTFA180701FV4R0XTMA1
PTFA180701FV4R0XTMA1
Infineon
RF MOSFET LDMOS 28V H-37265-2