FCP165N65S3R0
Part NoFCP165N65S3R0
Manufactureronsemi
DescriptionMOSFET N-CH 650V 19A TO220-3
Datasheet
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ECAD Module
Specification
PackageTube
SeriesSuperFET® III
ProductStatusNot For New Designs
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C19A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)165mOhm @ 9.5A, 10V
RdsOn(Max)@Id4.5V @ 1.9mA
Vgs39 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1500 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature154W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7802
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.974 | |
| 10 | 1.9345 | |
| 100 | 1.8753 | |
| 1000 | 1.8161 | |
| 10000 | 1.7371 |
Associated Product
