FDD6N25TM
RoHS

FDD6N25TM

Part NoFDD6N25TM
Manufactureronsemi
DescriptionMOSFET N-CH 250V 4.4A DPAK
Datasheet Download Now!
ECAD Module FDD6N25TM
Get Quotation Now!
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesUniFET™
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)250 V
Current-ContinuousDrain(Id)@25°C4.4A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.1Ohm @ 2.2A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs6 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)250 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature50W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-252AA
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock: 19934
Pricing
QTY UNIT PRICE EXT PRICE
1 0.3192
10 0.3128
100 0.3032
1000 0.2937
10000 0.2809
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
BUK7535-55A,127
BUK7535-55A,127
Nexperia
MOSFET N-CH 55V 35A TO220AB
SIHG25N50E-GE3
SIHG25N50E-GE3
Vishay Siliconix
MOSFET N-CH 500V 26A TO247AC
HUF75939P3
HUF75939P3
onsemi
MOSFET N-CH 200V 22A TO220-3
DMP3028LFDEQ-7
DMP3028LFDEQ-7
Diodes Inc.
MOSFET BVDSS: 25V~30V U-DFN2020-
SQJ443EP-T1_GE3
SQJ443EP-T1_GE3
Vishay Siliconix
MOSFET P-CH 40V 40A PPAK SO-8
IPD90N04S3H4ATMA1
IPD90N04S3H4ATMA1
Infineon
MOSFET N-CH 40V 90A TO252-3
SIE820DF-T1-GE3
SIE820DF-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V 50A 10POLARPAK