FDP61N20
Part NoFDP61N20
Manufactureronsemi
DescriptionMOSFET N-CH 200V 61A TO220-3
Datasheet
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ECAD Module
Specification
PackageTube
SeriesUniFET™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C61A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)41mOhm @ 30.5A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs75 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)3380 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature417W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
24489
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.9484 | |
| 10 | 2.8894 | |
| 100 | 2.801 | |
| 1000 | 2.7125 | |
| 10000 | 2.5946 |
Associated Product
