FQD4N20
RoHS

FQD4N20

Part NoFQD4N20
Manufactureronsemi
Description-
Datasheet Download Now!
ECAD Module FQD4N20
Get Quotation Now!
Specification
Drain Source Voltage (Vdss)-
Continuous Drain Current (Id)-
Drain Source On Resistance (RDS(on)@Vgs,Id)-
Power Dissipation (Pd)-
Gate Threshold Voltage (Vgs(th)@Id)-
Reverse Transfer Capacitance (Crss@Vds)-
Type-
Input Capacitance (Ciss@Vds)-
Total Gate Charge (Qg@Vgs)-
In Stock: 14566
Pricing
QTY UNIT PRICE EXT PRICE
1 0.2185
10 0.2141
100 0.2075
1000 0.201
10000 0.1923
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
SCT4026DRC15
SCT4026DRC15
ROHM
750V, 26M, 4-PIN THD, TRENCH-STR
ADP360120W3
ADP360120W3
STMicroelectronics
SIC 6N-CH 1200V 379A ACEPACK
IPBE65R075CFD7AATMA1
IPBE65R075CFD7AATMA1
Infineon
MOSFET N-CH 650V 32A TO263-7
IRFIZ46N
IRFIZ46N
Infineon
MOSFET N-CH 55V 33A TO220AB FP
IPD50N03S4L06ATMA1
IPD50N03S4L06ATMA1
INFINEON
MOSFET N-CH 30V 50A TO252-31
STP21N90K5
STP21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO220-3
NTLJD3115PT1G
NTLJD3115PT1G
onsemi
MOSFET 2P-CH 20V 2.3A 6WDFN