FQI32N20CTU
Part NoFQI32N20CTU
Manufactureronsemi
DescriptionMOSFET N-CH 200V 28A I2PAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesQFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C28A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)82mOhm @ 14A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs110 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)2220 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.13W (Ta), 156W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-262 (I2PAK)
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
5746
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.0486 | |
| 10 | 1.0276 | |
| 100 | 0.9962 | |
| 1000 | 0.9647 | |
| 10000 | 0.9228 |
Associated Product
