FQI34P10TU
Part NoFQI34P10TU
Manufactureronsemi
DescriptionMOSFET P-CH 100V 33.5A I2PAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesQFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C33.5A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)60mOhm @ 16.75A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs110 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)2910 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.75W (Ta), 155W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-262 (I2PAK)
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7620
Pricing
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Associated Product
