FQP19N20C_F080
Part NoFQP19N20C_F080
Manufactureronsemi
DescriptionMOSFET N-CH 200V 19A TO220-3
Datasheet
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ECAD Module
Specification
PackageTube
SeriesQFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C19A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)170mOhm @ 9.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs53 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1080 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature139W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3750
Pricing
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Associated Product
