FQP3N80C
Part NoFQP3N80C
Manufactureronsemi
DescriptionMOSFET N-CH 800V 3A TO220-3
Datasheet
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ECAD Module
Specification
PackageTube
SeriesQFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C3A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)4.8Ohm @ 1.5A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs16.5 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)705 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature107W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
21826
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.66 | |
| 10 | 0.6468 | |
| 100 | 0.627 | |
| 1000 | 0.6072 | |
| 10000 | 0.5808 |
Associated Product
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