FQP8N80C
Part NoFQP8N80C
Manufactureronsemi
DescriptionMOSFET N-CH 800V 8A TO220-3
Datasheet
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ECAD Module
Specification
PackageTube
SeriesQFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C8A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.55Ohm @ 4A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs45 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)2050 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature178W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
22416
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.1137 | |
| 10 | 3.0514 | |
| 100 | 2.958 | |
| 1000 | 2.8646 | |
| 10000 | 2.7401 |
Associated Product
