Specification
Mfronsemi
SeriesQFETu00ae
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25u00b0C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs10mOhm @ 45A, 10V
Vgs(th) (Max) @ Id4V @ 250u00b5A
Gate Charge (Qg) (Max) @ Vgs191 nC @ 10 V
Vgs (Max)u00b130V
Input Capacitance (Ciss) (Max) @ Vds6150 pF @ 25 V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55u00b0C ~ 175u00b0C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
Base Product NumberFQP9
In Stock:
6937
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.34 | |
| 10 | 0.333 | |
| 100 | 0.32 | |
| 1000 | 0.31 | |
| 10000 | 0.3 |
Associated Product
