FQU1N60TU
Part NoFQU1N60TU
Manufactureronsemi
DescriptionMOSFET N-CH 600V 1A IPAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesQFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C1A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)11.5Ohm @ 500mA, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs6 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)150 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.5W (Ta), 30W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeI-PAK
SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
13271
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6435 | |
| 10 | 0.6306 | |
| 100 | 0.6113 | |
| 1000 | 0.592 | |
| 10000 | 0.5663 |
Associated Product
