FQU2N100TU

Part NoFQU2N100TU

Manufactureronsemi

DescriptionMOSFET N-CH 1000V 1.6A IPAK

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ECAD Module

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Specification

PackageTube

SeriesQFET®

ProductStatusObsolete

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)1000 V

Current-ContinuousDrain(Id)@25°C1.6A (Tc)

DriveVoltage(MaxRdsOn10V

MinRdsOn)9Ohm @ 800mA, 10V

RdsOn(Max)@Id5V @ 250µA

Vgs15.5 nC @ 10 V

Vgs(th)(Max)@Id±30V

Vgs(Max)520 pF @ 25 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature2.5W (Ta), 50W (Tc)

PowerDissipation(Max)-55°C ~ 150°C (TJ)

OperatingTemperatureThrough Hole

MountingTypeI-PAK

SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA

Package/Case

GateCharge(Qg)(Max)@Vgs

Grade

Qualification

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