HUF75639P3-F102
Part NoHUF75639P3-F102
Manufactureronsemi
DescriptionMOSFET N-CH 100V 56A TO220-3
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C56A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)25mOhm @ 56A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs130 nC @ 20 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2000 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature200W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-220-3
GateCharge(Qg)(Max)@VgsTO-220-3
Grade
Qualification
In Stock:
7834
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.563 | |
| 10 | 2.5117 | |
| 100 | 2.4348 | |
| 1000 | 2.358 | |
| 10000 | 2.2554 |
Associated Product
