IRFW630BTM-FP001
Part NoIRFW630BTM-FP001
Manufactureronsemi
DescriptionMOSFET N-CH 200V 9A D2PAK
Datasheet
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Specification
PackageTape & Reel (TR)
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C9A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)400mOhm @ 4.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs29 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)720 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.13W (Ta), 72W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263 (D2PAK)
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
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3380
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