MJD32T4
RoHS

MJD32T4

Part NoMJD32T4
Manufactureronsemi
Description-
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ECAD Module MJD32T4
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Specification
Collector Cut-Off Current (Icbo)-
Collector-Emitter Breakdown Voltage (Vceo)40V
Power Dissipation (Pd)15W
Collector Current (Ic)3A
DC Current Gain (hFE@Ic,Vce)10@3A,4V
Transition Frequency (fT)3MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)1.2V@3A,375mA
Transistor TypePNP
Operating Temperature-65u2103~+150u2103@(Tj)
In Stock: 17407
Pricing
QTY UNIT PRICE EXT PRICE
1 0.1639
10 0.1606
100 0.1557
1000 0.1508
10000 0.1442
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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