Specification
Collector-Emitter Breakdown Voltage (Vceo)80V
Power Dissipation (Pd)225mW
Collector Current (Ic)500mA
DC Current Gain (hFE@Ic,Vce)100@10mA,1V
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)250mV@100mA,10mA
Transistor TypeNPN
Operating Temperature-55u2103~+150u2103@(Tj)
In Stock:
4183
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.0084 | |
| 10 | 0.0082 | |
| 100 | 0.008 | |
| 1000 | 0.0077 | |
| 10000 | 0.0074 |
Associated Product
