MT9M131C12STC-MI-DR
RoHS

MT9M131C12STC-MI-DR

Part NoMT9M131C12STC-MI-DR
Manufactureronsemi
DescriptionCMOS IMAGE SENSOR SYSTEM-ON-CHIP
Datasheet Download Now!
ECAD Module MT9M131C12STC-MI-DR
Get Quotation Now!
Specification
PackageBulk
Series*
ProductStatusActive
FETType-
Technology-
DraintoSourceVoltage(Vdss)-
Current-ContinuousDrain(Id)@25°C-
DriveVoltage(MaxRdsOn-
MinRdsOn)-
RdsOn(Max)@Id-
Vgs-
Vgs(th)(Max)@Id-
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature-
PowerDissipation(Max)-
OperatingTemperature-
MountingType-
SupplierDevicePackage-
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 3173
Pricing
QTY UNIT PRICE EXT PRICE
1 14.7405
10 14.4457
100 14.0035
1000 13.5613
10000 12.9716
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
FQPF13N50
FQPF13N50
onsemi
MOSFET N-CH 500V 12.5A TO220F
TSM019NH04LCR RLG
TSM019NH04LCR RLG
Taiwan Semiconductor
40V, 100A, SINGLE N-CHANNEL POWE
MTM763200LBF
MTM763200LBF
Panasonic
MOSFET N/P-CH 20V WSMINI6-F1
NTD60N02RG
NTD60N02RG
onsemi
MOSFET N-CH 25V 8.5A/32A DPAK
IRLBA3803P
IRLBA3803P
Infineon
MOSFET N-CH 30V 179A SUPER-220
IPD30N08S222ATMA1
IPD30N08S222ATMA1
Infineon
MOSFET N-CH 75V 30A TO252-3