NDC632P
Part NoNDC632P
Manufactureronsemi
DescriptionMOSFET P-CH 20V 2.7A SUPERSOT6
Datasheet
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Specification
PackageTape & Reel (TR),Cut Tape (CT)
Series-
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C2.7A (Ta)
DriveVoltage(MaxRdsOn2.7V, 4.5V
MinRdsOn)140mOhm @ 2.7A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs15 nC @ 4.5 V
Vgs(th)(Max)@Id-8V
Vgs(Max)550 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.6W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSuperSOT™-6
SupplierDevicePackageSOT-23-6 Thin, TSOT-23-6
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
24573
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