NDD03N60Z-1G
Part NoNDD03N60Z-1G
Manufactureronsemi
DescriptionMOSFET N-CH 600V 2.6A IPAK
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C2.6A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)3.6Ohm @ 1.2A, 10V
RdsOn(Max)@Id4.5V @ 50µA
Vgs12 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)312 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature61W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeI-PAK
SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
19264
Pricing
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Associated Product
