NDD03N60Z-1G

Part NoNDD03N60Z-1G

Manufactureronsemi

DescriptionMOSFET N-CH 600V 2.6A IPAK

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ECAD Module

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Specification

PackageTube

Series-

ProductStatusObsolete

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)600 V

Current-ContinuousDrain(Id)@25°C2.6A (Tc)

DriveVoltage(MaxRdsOn10V

MinRdsOn)3.6Ohm @ 1.2A, 10V

RdsOn(Max)@Id4.5V @ 50µA

Vgs12 nC @ 10 V

Vgs(th)(Max)@Id±30V

Vgs(Max)312 pF @ 25 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature61W (Tc)

PowerDissipation(Max)-55°C ~ 150°C (TJ)

OperatingTemperatureThrough Hole

MountingTypeI-PAK

SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA

Package/Case

GateCharge(Qg)(Max)@Vgs

Grade

Qualification

In Stock: 19264
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