NDD60N900U1-1G
Part NoNDD60N900U1-1G
Manufactureronsemi
DescriptionMOSFET N-CH 600V 5.7A IPAK
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C5.7A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)900mOhm @ 2.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs±25V
Vgs(th)(Max)@Id-
Vgs(Max)74W (Tc)
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 150°C (TJ)
FETFeatureThrough Hole
PowerDissipation(Max)I-PAK
OperatingTemperatureTO-251-3 Short Leads, IPak, TO-251AA
MountingType12 nC @ 10 V
SupplierDevicePackage360 pF @ 50 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4282
Pricing
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Associated Product
