NTB52N10G
RoHS

NTB52N10G

Part NoNTB52N10G
Manufactureronsemi
DescriptionMOSFET N-CH 100V 52A D2PAK
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ECAD Module NTB52N10G
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Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C52A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)30mOhm @ 26A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs±20V
Vgs(th)(Max)@Id3150 pF @ 25 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds2W (Ta), 178W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperatureD2PAK
MountingTypeTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SupplierDevicePackage135 nC @ 10 V
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock: 12892
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Shipping Information
Shiped FromShenZhen Warehourse
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