NTCR013N120M3S
Part NoNTCR013N120M3S
Manufactureronsemi
DescriptionWAFER DIE
Datasheet
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ECAD Module
Specification
PackageTray
Series-
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs20mOhm @ 75A, 18V
Vgs(th) (Max) @ Id4.4V @ 37mA
Gate Charge (Qg) (Max) @ Vgs254 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds5813 pF @ 800 V
FET Feature-
Mounting TypeSurface Mount
Supplier Device PackageDie
Package / CaseDie
Drive Voltage (Max Rds On, Min Rds On)18V
Vgs (Max)-
Power Dissipation (Max)-
Operating Temperature-
Grade-
Qualification-
In Stock:
2232
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 26.29 | |
| 10 | 25.764 | |
| 100 | 24.98 | |
| 1000 | 24.19 | |
| 10000 | 23.14 |
Associated Product
