NTD12N10G

Part NoNTD12N10G

Manufactureronsemi

DescriptionMOSFET N-CH 100V 12A DPAK

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Specification

PackageTube

Series-

ProductStatusObsolete

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)100 V

Current-ContinuousDrain(Id)@25°C12A (Ta)

DriveVoltage(MaxRdsOn10V

MinRdsOn)165mOhm @ 6A, 10V

RdsOn(Max)@Id4V @ 250µA

Vgs±20V

Vgs(th)(Max)@Id550 pF @ 25 V

Vgs(Max)-

InputCapacitance(Ciss)(Max)@Vds1.28W (Ta), 56.6W (Tc)

FETFeature-55°C ~ 175°C (TJ)

PowerDissipation(Max)Surface Mount

OperatingTemperatureDPAK

MountingTypeTO-252-3, DPak (2 Leads + Tab), SC-63

SupplierDevicePackage20 nC @ 10 V

Package/Case

GateCharge(Qg)(Max)@Vgs

Grade

Qualification

In Stock: 16785
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