NTD18N06-1G
Part NoNTD18N06-1G
Manufactureronsemi
DescriptionMOSFET N-CH 60V 18A IPAK
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C18A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)60mOhm @ 9A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs±20V
Vgs(th)(Max)@Id710 pF @ 25 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds2.1W (Ta), 55W (Tj)
FETFeature-55°C ~ 175°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperatureI-PAK
MountingTypeTO-251-3 Short Leads, IPak, TO-251AA
SupplierDevicePackage30 nC @ 10 V
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
6629
Pricing
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Associated Product
