NTD4856N-1G
Part NoNTD4856N-1G
Manufactureronsemi
DescriptionMOSFET N-CH 25V 13.3A/89A IPAK
Datasheet
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Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)25 V
Current-ContinuousDrain(Id)@25°C13.3A (Ta), 89A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)4.7mOhm @ 30A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs27 nC @ 4.5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2241 pF @ 12 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.33W (Ta), 60W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeI-PAK
SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
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