NTD4856N-35G

Part NoNTD4856N-35G

Manufactureronsemi

DescriptionMOSFET N-CH 25V 13.3A/89A IPAK

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ECAD Module

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Specification

PackageTube

Series-

ProductStatusObsolete

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)25 V

Current-ContinuousDrain(Id)@25°C13.3A (Ta), 89A (Tc)

DriveVoltage(MaxRdsOn4.5V, 10V

MinRdsOn)4.7mOhm @ 30A, 10V

RdsOn(Max)@Id2.5V @ 250µA

Vgs27 nC @ 4.5 V

Vgs(th)(Max)@Id±20V

Vgs(Max)2241 pF @ 12 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature1.33W (Ta), 60W (Tc)

PowerDissipation(Max)-55°C ~ 175°C (TJ)

OperatingTemperatureThrough Hole

MountingTypeI-Pak

SupplierDevicePackageTO-251-3 Stub Leads, IPak

Package/Case

GateCharge(Qg)(Max)@Vgs

Grade

Qualification

In Stock: 4809
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