NTD4960N-1G
Part NoNTD4960N-1G
Manufactureronsemi
DescriptionMOSFET N-CH 30V 8.9A/55A IPAK
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C8.9A (Ta), 55A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)8mOhm @ 30A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs22 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1300 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.07W (Ta), 35.71W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeI-Pak
SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
4101
Pricing
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Associated Product
