NTD6600N-1G
Part NoNTD6600N-1G
Manufactureronsemi
DescriptionMOSFET N-CH 100V 12A IPAK
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C12A (Ta)
DriveVoltage(MaxRdsOn5V
MinRdsOn)146mOhm @ 6A, 5V
RdsOn(Max)@Id2V @ 250µA
Vgs20 nC @ 5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)700 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.28W (Ta), 56.6W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeI-PAK
SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
5482
Pricing
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Associated Product
