NTH4L014N120M3P
Part NoNTH4L014N120M3P
Manufactureronsemi
DescriptionSIC MOSFET 1200 V 14 MOHM M3P SE
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C127A (Tc)
DriveVoltage(MaxRdsOn15V, 18V
MinRdsOn)20mOhm @ 74A, 18V
RdsOn(Max)@Id4.63V @ 37mA
Vgs329 nC @ 18 V
Vgs(th)(Max)@Id+22V, -10V
Vgs(Max)6230 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature686W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-4L
SupplierDevicePackageTO-247-4
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7287
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 44.0956 | |
| 10 | 43.2137 | |
| 100 | 41.8908 | |
| 1000 | 40.568 | |
| 10000 | 38.8041 |
Associated Product
