NTH4L022N120M3S
Part NoNTH4L022N120M3S
Manufactureronsemi
DescriptionSIC MOS TO247-4L 22MOHM 1200V
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C68A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)30mOhm @ 40A, 18V
RdsOn(Max)@Id4.4V @ 20mA
Vgs151 nC @ 18 V
Vgs(th)(Max)@Id+22V, -10V
Vgs(Max)3175 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature352W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-4L
SupplierDevicePackageTO-247-4
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5956
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 22.0023 | |
| 10 | 21.5623 | |
| 100 | 20.9022 | |
| 1000 | 20.2421 | |
| 10000 | 19.362 |
Associated Product
