NTH4L040N120SC1
Part NoNTH4L040N120SC1
Manufactureronsemi
DescriptionSICFET N-CH 1200V 58A TO247-4
Datasheet
Download Now!
ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C58A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)56mOhm @ 35A, 20V
RdsOn(Max)@Id4.3V @ 10mA
Vgs106 nC @ 20 V
Vgs(th)(Max)@Id+25V, -15V
Vgs(Max)1762 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature319W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-4L
SupplierDevicePackageTO-247-4
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
14786
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 26.4069 | |
| 10 | 25.8788 | |
| 100 | 25.0866 | |
| 1000 | 24.2943 | |
| 10000 | 23.2381 |
Associated Product
