NTH4L060N065SC1
Part NoNTH4L060N065SC1
Manufactureronsemi
DescriptionSIC MOS TO247-4L 650V
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C47A (Tc)
DriveVoltage(MaxRdsOn15V, 18V
MinRdsOn)70mOhm @ 20A, 18V
RdsOn(Max)@Id4.3V @ 6.5mA
Vgs74 nC @ 18 V
Vgs(th)(Max)@Id+22V, -8V
Vgs(Max)1473 pF @ 325 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature176W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-4L
SupplierDevicePackageTO-247-4
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4226
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 13.8852 | |
| 10 | 13.6075 | |
| 100 | 13.1909 | |
| 1000 | 12.7744 | |
| 10000 | 12.219 |
Associated Product
