NTH4L160N120SC1
Part NoNTH4L160N120SC1
Manufactureronsemi
DescriptionSICFET N-CH 1200V 17.3A TO247
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C17.3A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)224mOhm @ 12A, 20V
RdsOn(Max)@Id4.3V @ 2.5mA
Vgs34 nC @ 20 V
Vgs(th)(Max)@Id+25V, -15V
Vgs(Max)665 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature111W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-4L
SupplierDevicePackageTO-247-4
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7306
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 9.7679 | |
| 10 | 9.5725 | |
| 100 | 9.2795 | |
| 1000 | 8.9865 | |
| 10000 | 8.5958 |
Associated Product
