NTHL030N120M3S
Part NoNTHL030N120M3S
Manufactureronsemi
DescriptionSILICON CARBIDE (SIC) MOSFET EL
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C73A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)39mOhm @ 30A, 18V
RdsOn(Max)@Id4.4V @ 15mA
Vgs107 nC @ 18 V
Vgs(th)(Max)@Id2430 pF @ 800 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds313W (Tc)
FETFeature-55°C ~ 175°C (TJ)
PowerDissipation(Max)-
OperatingTemperature-
MountingTypeThrough Hole
SupplierDevicePackageTO-247-3
Package/CaseTO-247-3
GateCharge(Qg)(Max)@Vgs+22V, -10V
Grade
Qualification
In Stock:
4693
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 22.1706 | |
| 10 | 21.7272 | |
| 100 | 21.0621 | |
| 1000 | 20.397 | |
| 10000 | 19.5101 |
Associated Product
