NTHL040N120M3S
Part NoNTHL040N120M3S
Manufactureronsemi
DescriptionSIC MOS TO247-3L 40MOHM 1200V M3
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C54A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)54mOhm @ 20A, 18V
RdsOn(Max)@Id4.4V @ 10mA
Vgs75 nC @ 18 V
Vgs(th)(Max)@Id+22V, -10V
Vgs(Max)1700 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature231W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-3
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4742
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 12.73 | |
| 10 | 12.4754 | |
| 100 | 12.0935 | |
| 1000 | 11.7116 | |
| 10000 | 11.2024 |
Associated Product
